FJP13009High Voltage Fast-Switching NPN Power Transistor•High Voltage Capability•High Switching Speed•Suitable for Eleronic Ballast and Switching Mode Power SupplyAbsolute Maximum... ...
NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted* PW≤300μs, Duty Cycle≤10%Elerical Charaeristics TC=25°C unless otherwise noted* Pulse T... ...
原装IGBT25N120,FGA25N120ANTD,25N120
FGA25N120ANTD/FGA25N120ANTD_FV NPT Trench IGBTFeatures• NPT Trench Technology, Positive temperature coefficient• Low saturation voltage: VCE(sat), t = 2.0V@ IC = 25A and TC = 25... ...
NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted* PW≤300μs, Duty Cycle≤10%Elerical Charaeristics TC=25°C unless otherwise noted* Pulse T... ...
The RHRP840 and RHRP860 are herfast diodes with softrecovery characteristics (trr< 30ns). They have half therecovery time of ultrafast diodes and are silicon nitridepivated ion-implanted e... ...
供应童快恢复二管RHRP30120、30120、TO-220AC
30A, 1200V Herfast DiodeThe RHRP30120 is a herfast diode with soft recoverycharacteristics (trr < 65ns).It has half the recovery time ofultrafast diodes and is of silicon nitride pivated... ...
快恢复二管、RHRP1560、1560、TO-220AC、童原装
15A, 400V - 600V Herfast DiodesThe RHRP1540 and RHRP1560 are herfast diodes withsoft recovery characteristics (trr< 35ns). They have half therecovery time of ultrafast diodes and are silico... ...
BU406NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise notedElerical Charaeristics TC=25°C unless otherwise notedSymbol Parameter Value UnitsVCBO Collec... ...
原装童、FQPF10N60C、10N60、MOS管、TO-220F
FQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V• Low gate charge ( tical 44 nC)• Low Crss ( tical 18 pF)• Fast switching&... ...
30A, 1200V Herfast DiodeThe RHRP30120 is a herfast diode with soft recoverycharacteristics (trr < 65ns).It has half the recovery time ofultrafast diodes and is of silicon nitride pivated... ...